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IRL3502S - HEXFET Power MOSFET

General Description

These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment.

Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

Key Features

  • (14.173) MAX. 60.00 (2.362) M IN . NOTES : 1. CO M FO RM S TO EIA-418. 2. C O N T R O LLIN G D IM EN SIO N : M ILLIM ET ER . 3. D IM ENSIO N M EASUR ED @ HU B. 4. IN CLU D ES FLAN G E D ISTO R T IO N @ O U T ER ED G E. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 WORLD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY l Advanced Process Technology l Surface Mount l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching G Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.