IRL3715ZPbF Description
3.33 62 40 Units V A W W/°C °C Units °C/W 1 07/20/04 IRL3715Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 44 12 4.5 Units mJ A mJ Diode Characteristics Parameter.
IRL3715ZPbF Key Features
- High Frequency Synchronous Buck Converters for puter Processor Power
- Lead-Free PD - 95581 IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11
- Low RDS(on) at 4.5V VGS
- Ultra-Low Gate Impedance