IRL3715ZSPbF - Power MOSFET

This page provides the datasheet information for the IRL3715ZSPbF, a member of the IRL3715ZPbF Power MOSFET family.

Features

rtance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every sw.

International Rectifier (now Infineon)

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IRL3715ZSPbF Power MOSFET by International Rectifier - Datasheet Preview — Datasheet preview – IRL3715ZSPbF

Datasheet Details

Part number	IRL3715ZSPbF
Manufacturer	International Rectifier (now Infineon)
File Size	262.32 KB
Description	Power MOSFET
Datasheet	IRL3715ZSPbF Datasheet
Additional preview pages of the IRL3715ZSPbF datasheet.

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Full PDF Text Transcription

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95581 IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11m 7.0nC Benefits l Low RDS(on) at 4.

Published: Aug 15, 2015 |