IRL3716PbF Description
0.72 62 40 Units °C/W Notes through are on page 11 .irf. 1 6/22/04 IRL3716/3716S/3716LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRL3716PbF Key Features
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use
- High Frequency Buck Converters for puter Processor Power
- Active Oring
- Lead-Free VDSS 20V IRL3716PbF IRL3716SPbF IRL3716LPbF HEXFET® Power MOSFET RDS(on) max 4.0mΩ ID 180A Be
- Ultra-Low Gate Impedance
- Very Low RDS(on) at 4.5V VGS
- Fully Characterized Avalanche Voltage and Current TO-220AB IRL3716