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IRL40S212 - Power MOSFET

Key Features

  • oltage (V) 100 Fig 10. Maximum Safe Operating Area 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -5 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) Fig 12. Typical Coss Stored Energy RDS(on), Drain-to -Source On Resistance ( m) 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On.
  • Resistance vs. Drain Current 5 www. irf. com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015   1 D = 0.50 0.1 0.20 0.10 0.05 0.

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits Optimized for Logic Level Drive  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free  RoHS Compliant, Halogen-Free G Gate StrongIRFET™ IRL40B212 IRL40S212 HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 40V 1.5m 1.