Datasheet4U Logo Datasheet4U.com

IRL520NL - Power MOSFET

Download the IRL520NL datasheet PDF. This datasheet also covers the IRL520NS variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M 0.5 5 (.022 ) 0.4 6 (.018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL520NS_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRL520NL N-Channel MOSFET INCHANGE
IRL520N HEXFET Power MOSFET IRF
IRL520N TO-220C N-Channel MOSFET INCHANGE
IRL520N TO-220F N-Channel MOSFET INCHANGE
IRL520NS N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL520NLPbF Power MOSFET
IRL520NPBF Power MOSFET
IRL520NS Power MOSFET
IRL520NSPbF Power MOSFET
IRL520 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 91534 IRL520NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL520NS) l Low-profile through-hole (IRL520NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID = 10A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.