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IRL5602SPBF - POWER MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • . irf. com IRL5602SPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED.

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Other Datasheets by International Rectifier (now Infineon)

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IRL510 HEXFET Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95099 IRL5602SPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free D VDSS = -20V RDS(on) = 0.042Ω G S ID = -24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.