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IRL7472L1TRPbF - N-Channel Power MOSFET

Key Features

  • e 10msec 1 Tc = 25°C Tj = 175°C Single Pulse DC 0.1 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig 10. Maximum Safe Operating Area 50 Id = 5.0mA 49 48 47 46 45 44 43 42 41 -60 -20 20 60 100 140 TJ , Temperature ( °C ) 180 Energy (µJ) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -5 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy RDS(on), Drain-to -Source On Resistance (m) 1.8 Vgs = 3.5V 1.

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Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant StrongIRFET™ IRL7472L1TRPbF DirectFET® N-Channel Power MOSFET  VDSS RDS(on) typ. max @ VGS = 10V RDS(on) typ. max @ VGS = 4.5V ID (Silicon Limited) 40V 0.34m 0.59m 0.52m 0.