Datasheet4U Logo Datasheet4U.com

IRL7833PbF - Power MOSFET

Key Features

  • ents, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the paral.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRL7833 N-Channel MOSFET INCHANGE
IRL7833S N-Channel MOSFET INCHANGE
IRL7472L1 Power MOSFET Infineon
IRL7472L1TRPbF Power MOSFET Infineon
IRL1004 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL7833 Power MOSFET
IRL7833L Power MOSFET
IRL7833LPbF Power MOSFET
IRL7833S Power MOSFET
IRL7833SPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 3.8m 32nC Benefits l Very Low RDS(on) at 4.