Datasheet4U Logo Datasheet4U.com

IRLB8314PbF - Power MOSFET

Key Features

  • release. Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.067mH, RG = 50, IAS = 68A, VGS =10V.  Pulse width  400µs; duty cycle  2%.
  • R is measured at TJ approximately 90°C.  This value determined from sample failure population, starting TJ =25°C, L=0.5mH, RG = 50, IAS =60A, VGS =10V.  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 130A. Note that cu.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLB8314PbF Power MOSFET Infineon
IRLB8721 N-Channel MOSFET INCHANGE
IRLB8743 N-Channel MOSFET INCHANGE
IRLB8748 N-Channel MOSFET INCHANGE
IRLB3036 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLB8721 Power MOSFET
IRLB8721PBF Power MOSFET
IRLB8743PBF 30V Single N-Channel Power MOSFET
IRLB8748PBF Power MOSFET
IRLB3034PBF 40V Single N-Channel HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRLB8314PbF Application  Optimized for UPS/Inverter Applications  Low Voltage Power Tools Benefits  Best in Class Performance for UPS/Inverter Applications  Very Low RDS(on) at 4.5V VGS  Ultra-Low Gate Impedance  Fully Characterized Avalanche Voltage and Current  Lead-Free, RoHS Compliant D G S Base part number Package Type IRLB8314PbF TO-220Pak G Gate Standard Pack Form Quantity Tube 50 HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (Silicon Limited) ID (Package Limited) 30 2.4 3.