IRLBA3803 - HEXFET Power MOSFET

International Rectifier (now Infineon)

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

rent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

IRLBA3803 hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRLBA3803
Manufacturer	International Rectifier (now Infineon)
File Size	156.07 KB
Description	HEXFET Power MOSFET
Datasheet	IRLBA3803 Datasheet

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRLBA1304	Power MOSFET
IRLB3034PBF	40V Single N-Channel HEXFET Power MOSFET
IRLB3036PBF	60V Single N-Channel HEXFET Power MOSFET
IRLB3813PBF	Power MOSFET
IRLB4030PBF	100V Single N-Channel HEXFET Power MOSFET
IRLB4132PbF	Power MOSFET
IRLB8314PbF	Power MOSFET
IRLB8721	Power MOSFET
IRLB8721PBF	Power MOSFET
IRLB8743PBF	30V Single N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PD - 91841C www.datasheet4u.com IRLBA3803 HEXFET® Power MOSFET D ● ● ● ● ● ● Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Purchase IRLBA3803/P for solder plated option. VDSS = 30V RDS(on) = 0.005Ω G ID = 179AV Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.