Features Low RDSon (≤ 15.5mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 0.9 mm) Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
results in
Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number
IRLHS6342TRPbF IRLHS6342TR2PbF
Package Type
PQFN 2mm x 2.
Full PDF Text Transcription for IRLHS6342PBF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRLHS6342PBF. For precise diagrams, and layout, please refer to the original PDF.
VDS VGS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 ±12 15.5 11 12i V V mΩ nC A Applications • Charge and discharge switch for battery application ...
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A Applications • Charge and discharge switch for battery application • System/Load Switch TOP VIEW IRLHS6342PbF HEXFET® Power MOSFET D1 D2 G3 6D D 5D S 4S D D D G D D S S 2mm x 2mm PQFN Features and Benefits Features Low RDSon (≤ 15.5mΩ) Low Thermal Resistance to PCB (≤ 13°C/W) Low Profile (≤ 0.
More Datasheets from International Rectifier (now Infineon)
IRLHS6342PBF Datasheet
