Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- ackage Outline
TO-220 FullPak Outline Dimensions are shown in millimeters (inches)
1 0.60 (.417) 1 0.40 (.409) ø 3.40 (.133) 3.10 (.123) -A 3.70 (.145) 3.20 (.126) 7.10 (.2 80) 6.70 (.2 63) 4.80 (.189) 4.60 (.181)
2.80 (.110) 2.60 (.102) LE AD AS SIGN M EN T S 1 - GA TE 2 - D R AIN 3 - SO U RC E N OT ES : 1 D IME N SION IN G & T OLE R AN C IN G PER A NS I Y 14.5M , 1982 2 C ON T R OLLIN G D IM EN SION : IN CH . 16.00 (.630) 15.80 (.622)
1.15 (.045) M IN . 1 2 3 3.30 (.130) 3.10 (.122) -B -
1.
IRLIZ34N Datasheet
