Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- are shown in millimeters (inches)
10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) -A3.7 0 (.145) 3.2 0 (.126) 4.80 (.189 ) 4.60 (.181 ) 2.80 (.110) 2.60 (.102) L EA D AS SIGN M EN T S 1 - GA T E 2 - D R AIN 3 - SO U R C E
7.10 (.280 ) 6.70 (.263 )
16 .0 0 (.630) 15 .8 0 (.622)
1.15 (.045) M IN . 1 2 3
NO T ES : 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 2 C O N T R OLL IN G D IM EN SION : IN C H . 3.30 (.130) 3.10 (.122) -B 13 .7 0 (.540) 13 .5 0 (.530) C.
IRLIZ44N Datasheet
