IRLL014 Datasheet | International Rectifier

Description Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ Tc = 25°C ID @ Tc = 100°C IDM PD @Tc = 25°C PD @TA = 25°C Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current  Power Dissipation Power Dissipation (PCB Mount)- - Linear Derating Factor Linear Derating Factor (PCB Mount)- - Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds Max. 2.7 1.7 22 3.1 2.0 0.025 0.017 -/+10 100 2.7 0.31 4.5 -55 to + 150 300 (1.6mm from case) Units W/°C VGS EAS IAR EAR dv/dt TJ, TSTG V m J A m J V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-PCB Junction-to-Ambient. (PCB Mount)- - Typ. - - - - - - Max. 40 60 Units °C/W - - When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material). For remended footprint and soldering techniques refer to application note #AN-994. .irf. 2/1/99 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain...