IRLL014NPBF Overview
l l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for...
IRLL014NPBF Key Features
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- Fast Switching
- Fully Avalanche Rated
