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IRLL014PBF - POWER MOSFET

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95387 IRLL014PbF HEXFET® Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G S ID = 2.7A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.