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IRLML0030 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: VDS VGS Max RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 30 V ± 20 V 27 mΩ 40 mΩ PD - 96278B IRLML0030TRPbF HEXFET® Power MOSFET G1 S2 3D Micro3TM (SOT-23) IRLML0030TRPbF Application(s) • Load/ System.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Features Low RDS(on) ( ≤ 27mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Benefits Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Cu.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRLML0030PBF-1 Power MOSFET
IRLML0030TRPBF Power MOSFET
IRLML0040TRPBF HEXFET Power MOSFET
IRLML0060TRPBF HEXFET Power MOSFET
IRLML0100 Power MOSFET
IRLML0100PBF-1 Power MOSFET
IRLML0100TRPBF Power MOSFET
IRLML2030 Power MOSFET
IRLML2030TRPBF Power MOSFET
IRLML2060TRPBF Power MOSFET

IRLML0030 Distributor