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IRLR024PBF - HEXFET POWER MOSFET

General Description

Absolute Maximum Ratings www.irf.com 1 08/01/06 IRLR/U024PbF 2 www.irf.com IRLR/U024PbF www.irf.com 3 IRLR/U024PbF 4 www.irf.com IRLR/U024PbF www.irf.com 5 IRLR/U024PbF 6 www.irf.com IRLR/U024PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low

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Other Datasheets by International Rectifier (now Infineon)

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www.DataSheet4U.com PD- 96091 IRLR024PbF IRLU024PbF HEXFET® Power MOSFET • Lead-Free Description Absolute Maximum Ratings www.irf.com 1 08/01/06 IRLR/U024PbF 2 www.irf.com IRLR/U024PbF www.irf.com 3 IRLR/U024PbF 4 www.irf.com IRLR/U024PbF www.irf.com 5 IRLR/U024PbF 6 www.irf.com IRLR/U024PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.