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IRLR2703PBF - Power MOSFET

Download the IRLR2703PBF datasheet PDF. This datasheet also covers the IRLU2703PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLU2703PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR2703 HEXFET Power MOSFET
IRLR2705 HEXFET Power MOSFET
IRLR2705PBF HEXFET Power MOSFET
IRLR2905 POWER MOSFET
IRLR2905PBF POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 95083A IRLR/U2703PbF l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.045Ω ID = 23A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.