IRLR2908 Datasheet | International Rectifier

- 94501 AUTOMOTIVE MOSFET Features l l l l l l HEXFET® Power MOSFET IRLR2908 IRLU2908 VDSS = 80V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 28mΩ ID = 30A Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this HEXFET power MOSFET are a 175°C junction operating temperature, low R θJC, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRLR2908 I-Pak...