IRLR3103PbF Description
l HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.019Ω G S ID = 55A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a...
IRLR3103PbF Key Features
- Ultra Low On-Resistance
- Surface Mount (IRLR3103)
- Straight Lead (IRLU3103)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated