Datasheet4U Logo Datasheet4U.com

IRLR3105 - HEXFET Power MOSFET

General Description

MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G D VDSS = 55V RDS(on) = 0.037Ω ID = 25A S.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR3105 N-Channel MOSFET INCHANGE
IRLR3103 N-Channel MOSFET INCHANGE
IRLR3110Z N-Channel MOSFET INCHANGE
IRLR3110ZPBF N-Channel MOSFET VBsemi
IRLR3114Z N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR3105PBF HEXFET Power MOSFET
IRLR3103 Power MOSFET
IRLR3103PbF Power MOSFET
IRLR3110ZPBF Power MOSFET
IRLR3114ZPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94510B AUTOMOTIVE MOSFET IRLR3105 IRLU3105 HEXFET® Power MOSFET Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G D VDSS = 55V RDS(on) = 0.037Ω ID = 25A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.