IRLR3105 Datasheet | International Rectifier

- 94510B AUTOMOTIVE MOSFET IRLU3105 HEXFET® Power MOSFET Features l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS(on) = 0.037Ω ID = 25A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient...