IRLR3715Z Overview
3.75 50 110 Units V A W W/°C °C Units °C/W 1 04/02/03 IRLR/U3715Z Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 19 12 4.0 Units mJ A mJ Diode Characteristics Parameter IS Continuous Source Current fMin.
IRLR3715Z Key Features
- High Frequency Synchronous Buck Converters for puter Processor Power
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use Benefits
- Very Low RDS(on) at 4.5V VGS
- Ultra-Low Gate Impedance
- Fully Characterized Avalanche Voltage and Current PD - 94650A IRLR3715Z IRLU3715Z HEXFET® Power MOSFET VDS
