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IRLR3715Z - HEXFET Power MOSFET

Key Features

  • ncluded in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the outpu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current PD - 94650A IRLR3715Z IRLU3715Z HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 11m 7.