IRLR3915 Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free HEXFET® Power MOSFET VDSS = 55V RDS(on) = 14mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. ID = 30A D-Pak I-Pak IRLR3915Pb F IRLU3915Pb F Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value‡ Avalanche Current Repetitive Avalanche Energy† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 61 43 30 240 120 0.77 ± 16 200 600 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) Units W W/°C V m J A m J °C Thermal Resistance RθJC RθJA RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB mount)ˆ Junction-to-Ambient- - - Typ. - - - - - - 110 Max. 1.3 50 Units °C/W HEXFET(R) is a registered trademark of International Rectifier. .irf....