IRLR7811W Description
2.1 50 110 Units °C/W Notes through are on page 9 .irf. 1 06/10/02 IRLR7811W Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) Gate Threshold Voltage ∆VGS(th) /∆TJ Gate Threshold Voltage Coefficient IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Qg Qoss Rg td(on) tr...
IRLR7811W Key Features
- High Frequency Synchronous Buck Converters for puter Processor Power
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use Benefits
- Very Low RDS(on) at 4.5V VGS
- Ultra-Low Gate Impedance
- Fully Characterized Avalanche Voltage and Current IRLR7811W HEXFET® Power MOSFET VDSS 30V RDS(on) max 10.5m