IRLR8103 Description
These new devices employ advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. G S D-Pak Both the IRLR8103 and IRLR8503 have been optimized and are 100% tested for all parameters that are critical in synchronous...