IRLR8103V
IRLR8103V is N-Channel MOSFET manufactured by International Rectifier.
Description
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low bination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications.
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D-Pak
DEVICE CHARACTERISTICS
RDS(on) QG QSW QOSS
IRLR8103V 7.9 mΩ 27 n C 12 n C 29n C
The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS > 10V) Pulsed Drain Current TC = 25°C TC= 90°C
Symbol
VDS VGS ID IDM PD TJ , TSTG IS ISM
30 ±20 91 63 363 115 60 -55 to 150 91 363
Units
TC = 25°C Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃ TC = 90°C
Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current
W °C A
Thermal Resistance
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case h eh
Symbol
RθJA RθJC
Typ.
- -
- -
- -
Max.
50 1.09
Units
°C/W
.irf.
10/22/04
Electrical Characteristics
Parameter...
