IRLR8103VPBF Datasheet | International Rectifier

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low bination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. D-Pak DEVICE CHARACTERISTICS… RDS(on) QG QSW QOSS IRLR8103V 7.9 mΩ 27 n C 12 n C 29n C Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS > 10V) Pulsed Drain Current TC = 25°C TC= 90°C Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM IRLR8103V 30 ±20 91 63 363 115 60 -55 to 150 91 363 Units ™ TC = 25°C Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃà TC = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current W °C A ™ Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case .irf. h eh Symbol RθJA RθJC Typ. - - - - - - Max. 50 1.09 Units °C/W 12/0604 IRLR8103VPb F Electrical Characteristics...