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IRLSL3036PBF - 60V Single N-Channel HEXFET Power MOSFET

Download the IRLSL3036PBF datasheet PDF. This datasheet also covers the IRLS3036PBF variant, as both devices belong to the same 60v single n-channel hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • v, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs. Pulsewidth 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 165A Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLS3036PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRLSL3034PBF 40V Single N-Channel HEXFET Power MOSFET
IRLSL4030PBF 100V Single N-Channel HEXFET Power MOSFET
IRLS-G5653 INTEGRATED SWITCHER
IRLS3034-7PPBF 40V Single N-Channel HEXFET Power MOSFET
IRLS3034PBF 40V Single N-Channel HEXFET Power MOSFET
IRLS3036-7PPBF 60V Single N-Channel HEXFET Power MOSFET
IRLS3036PBF 60V Single N-Channel HEXFET Power MOSFET
IRLS3813PBF POWER MOSFET
IRLS4030-7PPBF 100V Single N-Channel HEXFET Power MOSFET
IRLS4030PBF 100V Single N-Channel HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -97358 IRLS3036PbF IRLSL3036PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 1.9mΩ 2.