Datasheet Summary
PD- 95081A
IRLR024NPbF IRLU024NPbF
HEXFET® Power MOSFET l Logic-Level Gate Drive
D l Surface Mount (IRLR024N) l Straight Lead (IRLU024N) l Advanced Process Technology l Fast Switching
G l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
VDSS = 55V RDS(on) = 0.065Ω
ID = 17A
The D-PAK is...
