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IRLU024PBF - HEXFET POWER MOSFET

Download the IRLU024PBF datasheet PDF. This datasheet also covers the IRLR024PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Absolute Maximum Ratings www.irf.com 1 08/01/06 IRLR/U024PbF 2 www.irf.com IRLR/U024PbF www.irf.com 3 IRLR/U024PbF 4 www.irf.com IRLR/U024PbF www.irf.com 5 IRLR/U024PbF 6 www.irf.com IRLR/U024PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR024PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU024 N-Channel MOSFET Samsung Electronics
IRLU024 Power MOSFET Vishay
IRLU024N N-Channel MOSFET INCHANGE
IRLU020 N-Channel MOSFET Samsung Electronics
IRLU014 Power MOSFET Vishay Siliconix

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU024 (IRLU/R024) Power MOSFET
IRLU024N Power MOSFET
IRLU024NPBF Power MOSFET
IRLU024Z Power MOSFET
IRLU024ZPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD- 96091 IRLR024PbF IRLU024PbF HEXFET® Power MOSFET • Lead-Free Description Absolute Maximum Ratings www.irf.com 1 08/01/06 IRLR/U024PbF 2 www.irf.com IRLR/U024PbF www.irf.com 3 IRLR/U024PbF 4 www.irf.com IRLR/U024PbF www.irf.com 5 IRLR/U024PbF 6 www.irf.com IRLR/U024PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.