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IRLU024ZPbF - Power MOSFET

Download the IRLU024ZPbF datasheet PDF. This datasheet also covers the IRLR024ZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR024ZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU024 N-Channel MOSFET Samsung Electronics
IRLU024 Power MOSFET Vishay
IRLU024N N-Channel MOSFET INCHANGE
IRLU020 N-Channel MOSFET Samsung Electronics
IRLU014 Power MOSFET Vishay Siliconix

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU024Z Power MOSFET
IRLU024 (IRLU/R024) Power MOSFET
IRLU024N Power MOSFET
IRLU024NPBF Power MOSFET
IRLU024PBF HEXFET POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free G Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.