IRLU024ZPbF Datasheet | International Rectifier

Features n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 95773B IRLR024ZPb F IRLU024ZPb F HEXFET® Power MOSFET VDSS = 55V RDS(on) = 58mΩ S ID = 16A D-Pak I-Pak IRLR024ZPb F IRLU024ZPb...