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IRLU2905 - POWER MOSFET

Download the IRLU2905 datasheet PDF. This datasheet also covers the IRLR2905 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Key Features

  • DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR2905_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 91334E IRLR/U2905 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.027Ω ID = 42A… Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.