IRLU2905ZPBF Datasheet | International Rectifier

Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET VDSS = 55V RDS(on) = 13.5mΩ ID = 42A D-Pak I-Pak IRLR2905ZPb F IRLU2905ZPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA RθJA j Parameter Junction-to-Case ij Junction-to-Ambient (PCB mount) j Junction-to-Ambient Max. 60 43 42 240 110 0.72 ± 16 57 85 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. -...