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IRLU2908PbF - Power MOSFET

Download the IRLU2908PbF datasheet PDF. This datasheet also covers the IRLR2908PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l HEXFET® Power MOSFET D IRLR2908PbF IRLU2908PbF VDSS = 80V RDS(on) = 28m Ω Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G S ID = 30A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR2908PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU2908 N-Channel MOSFET INCHANGE
IRLU2905Z N-Channel MOSFET INCHANGE
IRLU210A Power MOSFET Fairchild Semiconductor
IRLU220A ADVANCED POWER MOSFET Fairchild Semiconductor
IRLU230A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU2908 POWER MOSFET
IRLU2905 POWER MOSFET
IRLU2905PBF POWER MOSFET
IRLU2905Z POWER MOSFET
IRLU2905ZPBF POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95552A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET® Power MOSFET D IRLR2908PbF IRLU2908PbF VDSS = 80V RDS(on) = 28m Ω Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G S ID = 30A Description Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.