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IRLU3103 - Power MOSFET

This page provides the datasheet information for the IRLU3103, a member of the IRLR3103 Power MOSFET family.

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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

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l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process Technology G l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications.
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