IRLU3103 Datasheet | International Rectifier

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚‡ Avalanche Current‡ Repetitive Avalanche Energy‡ Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA RθJA .irf. Parameter Junction-to-Case Junction-to-Ambient (PCB mount) - - Junction-to-Ambient - 91333E IRLR/U3103 HEXFET® Power MOSFET VDSS = 30V RDS(on) = 0.019Ω ID = 55A… D -P A K T O -252 A A I-P A K TO -251AA Max. 55… 39… 220 107 0.71 ± 16 240 34 11 5.0 -55 to + 175 300 (1.6mm from case ) Typ. - - - - - - - - - Max. 1.4 50 110 Units W W/°C V m J A m J V/ns °C Units °C/W...