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IRLU3105PBF - HEXFET Power MOSFET

This page provides the datasheet information for the IRLU3105PBF, a member of the IRLR3105PBF HEXFET Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D IRLR3105PbF IRLU3105PbF ® VDSS = 55V RDS(on) = 0.037Ω G S ID = 25A.

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PD - 95553A AUTOMOTIVE MOSFET Features l l l l l l l HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D IRLR3105PbF IRLU3105PbF ® VDSS = 55V RDS(on) = 0.037Ω G S ID = 25A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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