IRLU3110ZPBF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax IRLU3110ZPb F HEXFET® Power MOSFET VDSS = 100V Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. RDS(on) = 14mΩ D-Pak I-Pak IRLR3110ZPb F IRLU3110ZPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V...