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IRLU3110ZPBF - Power MOSFET

This page provides the datasheet information for the IRLU3110ZPBF, a member of the IRLR3110ZPBF Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax IRLU3110ZPbF HEXFET® Power MOSFET D VDSS = 100V.

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www.DataSheet4U.com PD - 97175A AUTOMOTIVE MOSFET IRLR3110ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax IRLU3110ZPbF HEXFET® Power MOSFET D VDSS = 100V Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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