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IRLU3114ZPbF - Power MOSFET

This page provides the datasheet information for the IRLU3114ZPbF, a member of the IRLR3114ZPbF Power MOSFET family.

Datasheet Summary

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level.

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Full PDF Text Transcription

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Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 97284A IRLR3114ZPbF IRLU3114ZPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 4.
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