IRLU3114ZPbF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 97284A IRLR3114ZPb F IRLU3114ZPb F HEXFET® Power MOSFET VDSS = 40V RDS(on) = 4.9mΩ D-Pak I-Pak IRLR3114ZPb F IRLU3114ZPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) h Single Pulse Avalanche Energy Tested Value Ù Avalanche Current EAR g Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Reflow Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC j Junction-to-Case RθJA ij Junction-to-Ambient (PCB mount) RθJA j Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier....