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IRLU3303 - Power MOSFET

This page provides the datasheet information for the IRLU3303, a member of the IRLR3303 Power MOSFET family.

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • nductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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www.DataSheet4U.com PD- 91316F IRLR/U3303 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3303) Straight Lead (IRLU3303) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V G S RDS(on) = 0.031Ω ID = 35A… Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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