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IRLU3410 - HEXFET Power MOSFET

This page provides the datasheet information for the IRLU3410, a member of the IRLR3410 HEXFET Power MOSFET family.

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • = 5V for Logic Level Devices Fig 14. For N-Channel.

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www.DataSheet4U.com PD - 91607B IRLR/U3410 HEXFET® Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3410) l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(on) = 0.105Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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