IRLU3705Z Datasheet | International Rectifier

Features Logic Level Advanced Process Technology l Ultra Low On-Resistance l175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l l IRLR3705Z IRLU3705Z HEXFET® Power MOSFET VDSS = 55V RDS(on) = 8.0mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 42A D-Pak IRLR3705Z Max. 89 63 42 360 130 0.88 ± 16 I-Pak IRLU3705Z Units Absolute Maximum Ratings Parameter I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current I DM ™ P D @T C = 25°C Power Dissipation V GS Linear Derating Factor Gate-to-Source Voltage W W/°C V m J A m J E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value E AS (Tested ) I AR E AR TJ T STG Avalanche Current d Ù h 110 190 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance R θJC R θJA R θJA Junction-to-Case y y j Parameter Typ. Max. 1.14 40 110 Units °C/W Junction-to-Ambient (PCB mount) Junction-to-Ambient j ij - - - - - -...