IRLU3705ZPBF Datasheet | International Rectifier

Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free IRLU3705ZPb F HEXFET® Power MOSFET VDSS = 55V RDS(on) = 8.0mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. ID = 42A Absolute Maximum Ratings D-Pak I-Pak IRLR3705ZPb F IRLU3705ZPb F Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 89 63 42 360 130 Units A Linear Derating Factor VGS d E AS (Thermally limited) h EAS (Tested ) Ù IAR g E AR Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and TSTG Storage Temperature Range 0.88 ± 16 110 190 See Fig.12a, 12b, 15, 16 -55 to + 175 W/°C V m J A m J °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal...