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IRLU8259PBF - 25V Single N-Channel HEXFET Power MOSFET

Key Features

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  • ˆhyvsvph‡v‚Ã‡‚ÇurÃp‚†ˆ€r…yr‰ry 25 Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃPQUDPI6G QÃ2Ã9@TDBI6U@TÃG@69AS@@ QSP9V8UÃRV6GDAD@9ÃUPÃUC@ 8PITVH@SÃG@W@GÃPQUDPI6G `@6Sà X@@Fà Ã2Ã! % ,5)5   6TT@H7G` GPUÃ8P9@ 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ Note: For the most current drawing please refer to IR website at http://www. irf. com/package/ 8 www. irf. com www. DataSheet4U. com IRLR/U8259PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97360 www.DataSheet4U.com Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant IRLR8259PbF IRLU8259PbF HEXFET® Power MOSFET VDSS 25V RDS(on) max 8.7mΩ D Qg 6.8nC S G S D G D-Pak I-Pak IRLR8259PbF IRLU8259PbF G Gate D Drain S Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Max.