Datasheet4U Logo Datasheet4U.com

IRLU8721PBF - HEXFET Power MOSFET

Key Features

  • expanded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
  • dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎛ Qgs 2 ⎞ f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU8721 N-Channel MOSFET INCHANGE
IRLU8726 N-Channel MOSFET INCHANGE
IRLU8729 N-Channel MOSFET INCHANGE
IRLU8743 N-Channel MOSFET INCHANGE
IRLU8256 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU8726 Power MOSFET
IRLU8726PBF Power MOSFET
IRLU8729PBF Power MOSFET
IRLU8713PBF HEXFET Power MOSFET
IRLU8743PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET Power MOSFET IRLR8721PbF IRLU8721PbF ® 8.4m: PD - 96119 VDSS RDS(on) max 30V D Qg 8.5nC S G S D G D-Pak I-Pak IRLR8721PbF IRLU8721PbF G Gate D Drain S Source Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.