IRS21064S Datasheet | International Rectifier

IRS2106(4)D(S)Pb F Data Sheet No. PD60241 PRELIMINARY DATASHEET IRS2106(4)D(S)Pb F HIGH AND LOW SIDE DRIVER Features - - - - - - - - - Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage - d V/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic patible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity Outputs in phase with inputs Integrated bootstrap diode Packages 8-Lead SOIC 8-Lead PDIP 14-Lead SOIC 14-Lead PDIP Description IRS2106D/IRS2108D/IRS2109D/Feature parison The IRS2106(4)D(S) are high Crossvoltage, high speed power MOSFET Part Input Conduction Dead-Time Ground Pins Ton/Toff an 1GBT drivers with independent Logic Prevention high and low side referenced output logic channels. Proprietary HVIC and latch 2106 immune CMOS technologies enable 515/500 no none VSS/ 21064 HIN/LIN ruggedized monolithic construction. ___ 2108 Internal 540ns The logic input is patible with 220/220 yes Programmable 0.54- 5us VSS/ 21084 HIN/LIN Standard CMOS or LSTTL output, ___ 2109 Internal 540ns down to 3.3V logic. The output yes 750/220 21094 IN/SD Programmable 0.54- 5us VSS/ drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or 1GBT in the high side configuration which operates up to 600 volts. .. .irf. .. .. IRS2106(4)D(S)Pb...