IRS21851SPBF Datasheet | International Rectifier

Features SINGLE HIGH SIDE DRIVER IC Product Summary VOFFSET IO+/VOUT ton/off (typ.) 600 V max. 4A/ 4A 10 V - 20 V 170 ns & 170 ns Description The IRS21851 is a high voltage, high speed power MOSFET and IGBT single high-side driver with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The floating logic input is patible with standard CMOS or LSTTL output, down to 3.3 V logic and can be operated up to 600 V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high- side configuration, which operates up to 600 V. Package 8-Lead SOIC IRS21851 Typical Connection up to 600V VCC IN VCC IN VB HO VS TO LOAD (Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only. Please refer to our Application Notes and Design Tips for proper circuit board layout. .irf. IRS21851SPb F Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to . The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VC C V IN VB VS VHO d Vs /dt PD Rth JA TJ TS TL Definition Low-side supply voltage Logic input voltage (HIN) High-side floating well supply voltage High-side floating well supply return voltage Floating gate drive output voltage Allowable VS offset supply transient relative to Package power dissipation @ TA ≤ +25 °C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) Min. -0.3 -0.3 -0.3 V B - 20 VS - 0.3 - - - -55 -55 - Max. 20 (Note 1) VCC + 0.3 620 (Note 1) VB + 0.3 VB + 0.3 50 1.25 100 150 150 300 Units V/ns W °C/W °C Note 1: All...