IRS23365DM Description
The IRS23365DM is a high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and three lowside referenced output channels for 3-phase applications. This IC is designed to be used with low-cost bootstrap power supplies; the bootstrap diode functionality has been integrated into this device to reduce the ponent count and the PCB size.
IRS23365DM Key Features
- Drives up to six IGBT/MOSFET power devices
- Gate drive supplies up to 20 V per channel
- Integrated bootstrap functionality
- Over-current protection
- Over-temperature shutdown input
- Advanced input filter
- Integrated deadtime protection
- Shoot-through (cross-conduction) protection
- Undervoltage lockout for VCC & VBS
- Enable/disable input and fault reporting