IRS2609DSPBF
Features
Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage
- d V/dt immune ..
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V and 15 V input logic patible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High side output in phase with IN input
- Internal 530 ns dead-time
- Lower di/dt gate driver for better noise immunity
- Shut down input turns off both channels
- Integrated bootstrap diode
- Ro HS pliant
- Packages
8-Lead SOIC
Product Summary
VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600 V max. 120 m A / 250 m A 10 V
- 20 V 750 ns & 200 ns 530 ns
Description
The IRS2609D is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with Standard CMOS or...
